Corrigendum to "Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O molecules"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 343, P. 212, 2015/07

https://doi.org/10.1016/j.apsusc.2015.02.146

Corrigendum to "Commissioning of surface chemistry end-station in BL23SU of SPring-8" [Appl. Surf. Sci. 169-170 (2001) 738-741]

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 339, P. 158, 2015/06

https://doi.org/10.1016/j.apsusc.2015.02.144

Structure of GaAs(001)-c(44); Comparison of X-ray diffraction and first-principles calculation

Takahashi, Masamitsu; Kratzer, P.*; Penev, E.*; Mizuki, Junichiro

Surface Science, 600(18), p.4099 - 4102, 2006/09

https://doi.org/10.1016/j.susc.2006.01.127

The GaAs(001)-c(44) has been studied by synchrotron surface X-ray diffraction. The atomic coordinates and Debye-Waller factors were determined up to the sixth layer from the surface. The results support the formation of the Ga-As heterodimers. The resultant atomic coordinates were compared with those given by a first-principle calculation. In spite of the theoretical prediction of the stability of the single-heterodimer structure, our data fit best a three-heterodimer model where three heterodimers are present in one unit cell. The preference of the formation of the three heterodimers will be discussed in the relationship with the transition process from the 24 to the c(44) structures.

Full characterization of an intense pulsed hyperthermal molecular beam

Watanabe, Daisuke*; Che, D.-C.*; Fukuyama, Tetsuya*; Hashinokuchi, Michihiro*; Teraoka, Yuden; Kasai, Toshio*

Review of Scientific Instruments, 76(5), p.055108_1 - 055108_5, 2005/05

https://doi.org/10.1063/1.1898204

A molecular beam technique for generating an intense pulsed hyperthermal molecular beam (HTMB) was developed. The beam source consists of a pulse valve, a cooling-water bottle that protectes the pulse valve from heat transfer of a high temperature nozzle, and the nozzle with a heater. The pulsed HTMB of HCl was practically generated and characterized by means of (2+1) resonance-enhanced multiphoton ionization and ion time-of-flight techniques.

X-ray diffraction study on GaAs(001)-24 surfaces under molecular-beam epitaxy conditions

Takahashi, Masamitsu; Yoneda, Yasuhiro; Mizuki, Junichiro

Applied Surface Science, 237(1-4), p.219 - 223, 2004/10

https://doi.org/10.1016/j.apsusc.2004.07.018

The GaAs(001)- reconstructed surface was investigated by in situ surface X-ray diffraction. The sample was subjected to measurements under molecular-beam epitaxy conditions without being transferred another chamber. Several X-ray diffraction patterns were measured with increasing the substrate temperature within the -phase of GaAs(001)- in a constant As flux of 510 Torr. At relatively low temperatures up to 545C, the observed X-ray diffraction patterns agree well to the 2(24) surface. However, a different X-ray diffraction pattern was obtained at 585C, while the periodicity still persited. This change is explained by partial As-dimer desorption which results in a mixture of the 2(24) and 2(24) structures.

Initial oxidation of Ti(0001) surfaces induced by supersonic oxygen molecular beams

Ogawa, Shuichi*; Takakuwa, Yuji*; Ishizuka, Shinji*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke; Hachiue, Shunsuke

JAERI-Tech 2004-046, 25 Pages, 2004/06

JAERI-Tech-2004-046.pdf:2.51MB

We investigated the correlation between initial sticking coefficient and O transitional kinetic energy to understand O adsorption processes on the Ti(0001) surface via photoemission spectroscopy for O-1s and Ti-2p core levels using the surface reaction analysis apparatus, installed at the JAERI soft X-ray beamline BL23SU in the SPring-8. We observed the decrease of initial sticking coefficient of O molecules on the Ti(0001) surface with increasing O transitional kinetic energy. We concluded that the O adsorption on the Ti(0001) surface proceeded by a trapping-mediated dissociative adsorption mechanism. The constant dependence of the initial sticking coefficient on incident angle of O beams also suggested the propriety of the trapping-mediated surface reaction mechanism.

Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, Part 1, 42(9A), p.5749 - 5750, 2003/09

https://doi.org/10.1143/JJAP.42.5749

We investigated oxidation reactions induced by the translational kinetic energy of O on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si species including the Si, Si and Si species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.

Time-resolved X-ray diffraction study on surface structure and morphology during molecular beam epitaxy growth

Takahashi, Masamitsu; Yoneda, Yasuhiro; Inoue, Hirotane*; Yamamoto, Naomasa*; Mizuki, Junichiro

Journal of Crystal Growth, 251(1-4), p.51 - 55, 2003/04

https://doi.org/10.1016/S0022-0248(02)02375-8

The reflection high energy electron diffraction (RHEED) oscillation has been widely adopted for studies on growth kinetics and dynamics in molecular beam epitaxy (MBE). Recent development in brilliant X-ray source has enabled similar experiments with X-rays, which has great advantage in a straightforward interpretation of results and in a high angular resolution. In general, the diffracted intensity from surface is proportional to the surface structure factor associated with the surface reconstruction, F, multiplied by a damping factor associated with the surface roughness, m. We show that the two factors, F and m, can be obtained separately by measuring diffuse scattering around the two-dimensional Bragg peak during growth.

X-ray diffractometer for studies on molecular-beam-epitaxy growth of III-V semiconductors

Takahashi, Masamitsu; Yoneda, Yasuhiro; Inoue, Hirotane*; Yamamoto, Naomasa*; Mizuki, Junichiro

Japanese Journal of Applied Physics, Part 1, 41(10), p.6247 - 6251, 2002/10

https://doi.org/10.1143/JJAP.41.6247

An X-ray diffractometer connected with a molecular-beam epitaxy (MBE) system has been constructed for in situ studies on the growing surfaces of III-V compound semiconductors. This diffractometer is based on the (4+2) type and equipped with an axis for rotating the receiving slit about the normal of the slit plane. This additional axis is used to align the resolution of the receiving slit properly for the surface X-ray diffraction measurement. For the alignment of the sample and the whole setup with respect to the X-ray beam, an XYZ-stage and an adjustable base plate are available. X-rays enter and leave the chamber through two cylindrical Be windows welded onto the MBE chamber. A graphite sheet which can be heated up to 250C is placed along the inside of the Be windows to protect the Be windows from being coated with evaporated materials. Preliminary data are presented to demonstrate the feasibility of static and dynamic measurements of growing surfaces using this instrument.

observation of oxidation states on Si(001)-21 during supersonic O molecular beam irradiation

Yoshigoe, Akitaka; Teraoka, Yuden

Atomic Collision Research in Japan, No.27, p.80 - 82, 2001/00

no abstracts in English